Toshiba and SanDisk Celebrate the opening of Fab 5 300mm NAND Flash Memory Fabrication Facility in Japan. Consumer demand for Smartphones, Tablets and other consumer electronic devices continues to fuel strong global demand for NAND flash memory. Toshiba began the construction of Fab 5 in July 2010, and the new facility, equipped with manufacturing equipment funded by Toshiba and SanDisk, started volume production in July 2011. Fab 5 currently uses 24 nanometer process technology and its first wafer outs will be in August 2011.